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X-WR-CALNAME:Engineering Seminar: Semiconductor Opening Device Characteriza
 tions\, Package Comparisons\, and TCAD Modeling for Pulsed Power Systems
X-WR-TIMEZONE:Central Time (US & Canada)
BEGIN:VEVENT
DTSTAMP:20260712T021536Z
UID:tag:localist.com\,2008:EventInstance_49081380122531
DTSTART:20250328T180000Z
DTEND:20250328T190000Z
DESCRIPTION:Dr. Stephen Bayne\, Vice Chancellor for Innovation and Collabor
 ation\, Executive Director of the Institute for Critical Infrastructure Se
 curity and John R. Bradford Endowed Chair in Engineering at Texas Tech Uni
 versity will give a seminar titled "Semiconductor Opening Device Character
 izations\, Package Comparisons\, and TCAD Modeling for Pulsed Power System
 s" to the interested faculty and students at Discovery Park.\n\n \n\nAbstr
 act\n\nSemiconductor opening switch (SOS) diodes and drift step recovery d
 iodes (DSRDs) are viable options for opening devices in pulsed power elect
 ronic systems\, enabling the generation of high-power nanosecond pulses. S
 OS diodes rely on an opening effect to transfer power to a parallel load i
 nstead of closing switch technology for energy transfer. This work charact
 erizes and evaluates the performance of silicon SOS diodes with varying do
 ping profile gradients and a commercially produced SiC DSRD. For the Si SO
 S diode\, a double-loop LC testbed was designed to pulse SOS diodes to obs
 erve the SOS opening effect. Six doping profiles were compared\, each with
  three different active area sizes. Following this\, three custom-designed
  packages were developed to house the devices and compared in terms of per
 formance. Measurements were taken with single and series stacks of two and
  three devices to compare peak power and energy efficiency. COMSOL Multiph
 ysics models were used to assess the thermal behavior of each package desi
 gn during single pulse and repetition rate operation. The results highligh
 t a strong electrical and thermal performance optimization dependence on t
 he doping profile and package thermal resistance\, respectively. The SiC D
 SRD is first characterized in transient and DC conditions to extrapolate d
 evice and material properties. A custom testbed was developed to rapidly a
 lter discrete capacitance and inductance values to perform the transient c
 haracterizations. This flexibility allows for a broader range of sweep con
 ditions to be tested. Based on these characterizations\, a TCAD model is g
 enerated in Silvaco Victory Device. The model aims to converge on the meas
 ured values from the physical device through an iterative optimization pro
 cess. Once optimized\, this model will serve as a basis for high-voltage S
 iC SOS diode modeling.\n\n \n\nBio\n\nDr. Bayne is a professor and previou
 s interim Dean for the Whitacre College of Engineering and previous Depart
 ment Chair for Electrical and Computer Engineering at Texas Tech and has s
 everal years of experience in leadership and technical research. Before jo
 ining Texas Tech\, he was chief of the directed energy branch at the Army 
 Research Lab\, where he managed three teams consisting of engineers\, tech
 nicians and support staff. In 2009\, Dr. Bayne joined Texas Tech and was n
 amed department chair in 2021\, where he led a team of 28 faculty and inst
 ructors and was responsible for the recruitment and retention of undergrad
 uate and graduate students. As a department chair\, he managed the budget\
 , conducted annual reviews for faculty and staff and was responsible for r
 ecruiting new faculty into the department. An active researcher in the dep
 artment\, Bayne brought in more than $32\,691\,998 ($11\,541\,066 credited
 ) in research funding to Texas Tech and established a robust energy resear
 ch program. With more than 219 publications\, a book and a book chapter to
  his credit\, Dr. Bayne also has two U.S. patents. He has earned several r
 esearch and teaching awards\, most notably the Barnie E. Rushing\, Jr. Fac
 ulty Distinguished Research Award STEM Disciplines\; TTU Lockheed Martin E
 xcellence in Engineering Teaching award\; Army Greatest Invention Award\; 
 and the Army Research Lab Achievement Award for Engineering.advisory panel
 s. He received his Ph.D. in engineering mechanics from University of Minne
 sota in 1985.
GEO:33.253134;-97.148579
LOCATION:Discovery Park Building\, K150
SUMMARY:Engineering Seminar: Semiconductor Opening Device Characterizations
 \, Package Comparisons\, and TCAD Modeling for Pulsed Power Systems
URL;VALUE=URI:https://calendar.unt.edu/event/es-202503281300
CATEGORIES:Lectures & Speakers
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