Dr. Niklas Hellgren, Professor of Physics and Chair of the Department of Computing, Mathematics, and Physics at Messiah University, will give a seminar titled "Thin Film Growth by Ion-Assisted Sputtering – A Case Study of Titanium Diboride" to the interested faculty and students at Discovery Park.

Abstract

Ion bombardment during thin-film growth has long been recognized as a critical factor for tailoring film properties. In conventional DC magnetron sputtering (DCMS), where the ionization fraction is typically limited to a few percent, the ability to fine-tune these properties is relatively constrained. However, the advent of high-power impulse magnetron sputtering (HiPIMS) has transformed the landscape, enabling ionization rates that can exceed 50%. This is achieved by delivering short, high-intensity power pulses, which offer new opportunities for precise control of film characteristics. At the same time, the introduction of additional process parameters presents challenges in understanding and optimizing the process space.

In this talk, I will explore the influence of growth parameters during DCMS and HiPIMS deposition of titanium diboride (TiB₂). As a refractory ceramic, TiB₂ boasts exceptional properties, including high hardness, a high melting point, and excellent thermal and electrical conductivity. Additionally, its growth provides an intriguing case study due to the disparity in mass, size, and ionization potential of its constituent elements, making the film composition particularly sensitive to deposition conditions. While TiB₂ is distinctive in many respects, the insights from this study extend beyond a single material, offering valuable guidance for other material systems and applications, such as microelectronics and advanced coatings.

Bio

Dr. Niklas Hellgren is a Professor of Physics and Chair of the Department of Computing, Mathematics, and Physics at Messiah University in Mechanicsburg, Pennsylvania. He earned his Ph.D. in Materials Science from Linköping University, Sweden, in 1999, followed by a postdoctoral fellowship at the Materials Research Laboratory at the University of Illinois Urbana-Champaign. Dr. Hellgren then joined Intel Corporation as a Senior Process Development Engineer in the Portland Technology Development division, where he contributed to cutting-edge advancements in semiconductor technology. With three decades of expertise in thin-film growth and characterization, Dr. Hellgren has made significant contributions to the study of borides, carbides, nitrides, and oxides, utilizing techniques such as magnetron sputtering, HiPIMS, and plasma-enhanced CVD. He has given numerous presentations around the world and has authored over 65 peer-reviewed publications.