Dr. Ariful Haque, Assistant Professor of Electrical Engineering in the Ingram School of Engineering at Texas State University will give a seminar titled "Integration of Diamond with Ultra-Wide Bandgap Semiconductors" to the interested faculty and students at Discovery Park.

Abstract

Ultra-wide bandgap (UWBG) semiconductors, such as beta-gallium oxide (β-Ga2O3) and III-Nitrides (AlGaN and AlN), are emerging as key materials for next-generation power and high-frequency communication devices in both commercial and military applications. Their exceptional properties, including high breakdown voltages, chemical and thermal stability, and UV transparency, enable device operation at higher voltages, frequencies, and temperatures compared to conventional semiconductors like silicon, GaAs, and GaN. Despite these advantages, the low anisotropic thermal conductivity of β-Ga2O3 and III-Nitrides poses a critical challenge by inducing self-heating effects (SHE), which constrains output power density and limits maximum current flow. Integrating diamond—a material with extraordinary thermal conductivity (2000 W/m/K)—as a heat dissipation layer on β-Ga2O3 and III-Nitride semiconductors offers a transformative approach to mitigating these thermal issues. Diamond coatings, with their p-type doping capability, enhance thermal management, improve device performance, extend operational lifespan, and increase electrical efficiency, making them ideal for robust, high-power electronic applications. This talk explores the complexities of depositing diamond on β-Ga2O3 and III-Nitride films, focusing on overcoming adhesion and thermal mismatch challenges. By employing successive pulsed laser deposition (PLD) and pulsed laser annealing (PLA) techniques to synthesize quenched carbon (Q-carbon), we demonstrate enhanced nucleation density and reduced stress during diamond growth. Our results highlight the potential of Q-carbon layers in facilitating high-quality diamond coatings, paving the way for advanced heterostructure devices with superior thermal and electronic performance.

Bio

Dr. Ariful Haque is an Assistant Professor of Electrical Engineering in the Ingram School of Engineering at Texas State University. He also holds an appointment in the interdisciplinary Materials Science, Engineering & Commercialization Ph.D. program at Texas State. Prior to joining Texas State, he worked as a Technology Development Engineer in the Logic Technology Development (LTD) division at Intel Corporation, where he contributed to developing next-generation semiconductor process technology. Dr. Haque earned Ph.D. degrees in Electrical Engineering (EE) and Materials Science & Engineering (MSE) in 2020 from North Carolina State University (NCSU). During his doctoral studies, he focused on the fabrication, characterization, and optimization of carbon-based and III-nitride UWBG semiconductor materials and devices. In 2019, he completed a Master of Nanoengineering degree at NCSU, specializing in nanoelectronics and nanophotonics. Additionally, he holds an M.S. in Materials Science from Missouri State University (2015) and a B.S. in Electrical & Electronic Engineering from Bangladesh University of Engineering & Technology (2012). Dr. Haque has published over 60 articles in reputable peer-reviewed journals and IEEE transactions, along with six proceedings papers. He has delivered more than a dozen conference presentations and invited talks at prestigious international conferences and universities in North America and Asia.